UVblade
Brand: Coherent | Category: Scientific & Laboratory Equipment
UVblade uses 308 nm excimer pulses to detach polymer based flexible displays from rigid glass carriers in a laser lift-off process. Three models cover beam lengths of 380 mm, 750 mm and 1250 mm with a top hat line beam and a large depth of focus.
Technical Specifications
| Parameter | Value |
|---|---|
| Wavelength | 308 nm |
| UVblade 380 | 580 mJ pulse energy, 200 Hz, 380 mm beam length |
| UVblade 750 | 1000 mJ or 2000 mJ pulse energy, 600 Hz, 750 mm beam length |
| UVblade 1250 | 2000 mJ pulse energy, 600 Hz, 1250 mm beam length |
| Line beam homogeneity | 1.8 % (2 sigma) |
| Depth of focus | +/-200 microns |
Get a Quote
Request an itemised quotation covering the proposed configuration, availability, lead time and agreed supply and support scope.
Useful details to share
- Intended application, process or teaching activity
- Required capability and equipment it must work with
Share what you know. You can start with your name and a phone number or email; final specifications can follow.
Not sure which configuration you need? Help me choose
Contact Vvon Technologies Limited about Coherent equipment requirements in Bangladesh.
Phone: +8801805987890 | Email: info@vvon.com.bd
Back to Scientific & Laboratory Equipment
More from Laser Systems
- UVtransfer
UVtransfer systems are 248 nm excimer laser tools for microLED display production. The 3-in-1 system performs laser lift-off, laser induced forward transfer and pixel repair for development work, while UVtransfer and UVtransfer R are production LIFT and repair tools.
- LineBeam
LineBeam systems deliver line beam profiles for excimer laser annealing of low temperature polysilicon backplanes on large display substrates. Line lengths run from 750 mm to 1500 mm at 308 nm or 355 nm, with top hat profiles along both axes.
- VarioLas
VarioLas systems are built around the COMPex excimer laser for ultraviolet microprocessing with a line beam or square beam field shape. They are used for laser lift-off separation, dopant ion activation, ablative patterning and thin film annealing.