Brand: Oxford Instruments | Category: Nanotechnology

The PlasmaPro 100 Estrelas creates deep, steep sided trenches and vias in silicon. It runs both Bosch and cryogenic processes in the same chamber, covering high rate cavity etches, high aspect ratio features and tapered vias for MEMS and advanced packaging.
| Parameter | Value |
|---|---|
| Specification | Compatible with 50 mm to 200 mm substrates |
| Specification | Bosch and cryogenic processes run in the same chamber |
| Cryogenic process temperature | approximately -110 °C |
| Specification | Mechanical or electrostatic clamping |
| Specification | Heated liners and top plate |
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The PlasmaPro 100 PECVD deposits dielectric and silicon based films with control of refractive index, stress, electrical properties and wet chemical etch rate. Dual frequency power applied to the showerhead electrode allows stress control and film densification.
The PlasmaPro 100 RIE delivers isotropic and anisotropic dry etching across a wide process range. A single RF plasma source sets both ion density and energy, with load lock and cassette to cassette options for repeatable research and production work up to 200 mm.
The PlasmaPro 100 ICPCVD uses a high density remote plasma to grow dielectric films at low temperature with little substrate damage. Typical materials include silicon dioxide, silicon nitride, silicon oxynitride, silicon and silicon carbide on wafers up to 200 mm.