Atomfab
Brand: Oxford Instruments | Category: Nanotechnology
Atomfab is a plasma enhanced atomic layer deposition system built for volume production of GaN power and RF devices. A remote plasma source designed for atomic scale processing gives low damage passivation and gate dielectric films, with clusterable automated wafer handling.
Technical Specifications
| Parameter | Value |
|---|---|
| Plasma ALD Al2O3 at 300 °C, within wafer thickness uniformity | <±1.0% |
| Plasma ALD Al2O3 at 300 °C, wafer to wafer thickness repeatability | <±1.0% |
| Plasma ALD Al2O3 at 300 °C, breakdown voltage | >=7.0 MV/cm |
| Plasma exposure time | 250 ms |
| Plasma strike time | 80 ms |
| Specification | Remote plasma ALD with controlled ion energy from near zero to 30 eV |
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