PlasmaPro 100 ALE
Brand: Oxford Instruments | Category: Nanotechnology
The PlasmaPro 100 ALE applies a cyclical, digital etch process for precise depth control on nanoscale layers. Built on the Cobra ICP platform, it removes material with low damage and smooth surfaces for GaN HEMT recess etching and 2D material patterning.
Technical Specifications
| Parameter | Value |
|---|---|
| Electrode temperature range | -150 °C to +400 °C |
| ICP source sizes | 65 mm, 180 mm, 300 mm |
| Specification | Process uniformity up to 200 mm wafers |
| Specification | Accommodates substrates up to 10 mm thick |
| Specification | Wafer clamping with helium backside cooling |
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More from Plasma Etching & Deposition
- PlasmaPro 100 ALE with Etchpoint
This configuration pairs the PlasmaPro 100 ALE with the Etchpoint UV reflectance etch depth monitor developed with LayTec. It measures remaining AlGaN thickness during processing, so p-GaN HEMT and recessed gate MISHEMT structures can be etched to a set depth.
- PlasmaPro ASP
PlasmaPro ASP is a remote plasma enhanced ALD system sharing the Atomfab platform. It deposits conformal oxides and nitrides across 200 mm wafers at high rate, using a low volume chamber for rapid gas exchange and a biased electrode for tuning film properties.
- PlasmaPro 100 Cobra ICP RIE
The PlasmaPro 100 Cobra ICP RIE uses a high density inductively coupled plasma for fast etch rates with independent control of substrate bias. It handles wafers up to 200 mm and serves GaAs and InP optoelectronics, microLEDs, SiC and GaN power devices and MEMS.