Brand: Oxford Instruments | Category: Nanotechnology

The PlasmaPro 100 Cobra ICP RIE uses a high density inductively coupled plasma for fast etch rates with independent control of substrate bias. It handles wafers up to 200 mm and serves GaAs and InP optoelectronics, microLEDs, SiC and GaN power devices and MEMS.
Plan your specification
Cobra uses separate ICP and substrate-bias control. The useful configuration depends on the material stack, profile and damage limits of your device.
| Parameter | Value |
|---|---|
| Wafer size | up to 200 mm |
| ICP source sizes | 65 mm and 300 mm |
| Electrode temperature range | -150 °C to 400 °C |
| Specification | Clusters with up to 5 process modules |
| Specification | Transition from 20 °C to -150 °C in as little as 10 minutes |
| Specification | Wafer clamping with helium backside cooling |
Request an itemised quotation covering the proposed configuration, availability, lead time and agreed supply and support scope.
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Contact Vvon Technologies Limited about Oxford Instruments equipment requirements in Bangladesh.
Phone: +8801805987890 | Email: info@vvon.com.bd
A PlasmaPro 100 Cobra configuration set up for volume VCSEL manufacture. The process gives a clean mesa sidewall finish, controlled profile angle for critical dimension control and very low footing, working with either photoresist or a hard mask.
This configuration pairs the PlasmaPro 100 ALE with the Etchpoint UV reflectance etch depth monitor developed with LayTec. It measures remaining AlGaN thickness during processing, so p-GaN HEMT and recessed gate MISHEMT structures can be etched to a set depth.
The PlasmaPro 100 RIE delivers isotropic and anisotropic dry etching across a wide process range. A single RF plasma source sets both ion density and energy, with load lock and cassette to cassette options for repeatable research and production work up to 200 mm.