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PlasmaPro 100 Cobra ICP RIE

Brand: Oxford Instruments | Category: Nanotechnology

PlasmaPro 100 Cobra ICP RIE

The PlasmaPro 100 Cobra ICP RIE uses a high density inductively coupled plasma for fast etch rates with independent control of substrate bias. It handles wafers up to 200 mm and serves GaAs and InP optoelectronics, microLEDs, SiC and GaN power devices and MEMS.

Plan your specification

Specify the Cobra ICP-RIE process before the tool options

Cobra uses separate ICP and substrate-bias control. The useful configuration depends on the material stack, profile and damage limits of your device.

Etch result to demonstrate
Provide the material and mask stack, target depth, feature sizes and acceptance criteria for profile, selectivity and uniformity. Ask for process evidence relevant to that stack.
Substrate handling and cooling
State wafer or coupon dimensions, carrier needs and temperature limits. Agree the clamping, backside cooling, electrode and loading arrangement in the proposed configuration.
Complete installation scope
Request a schedule of gases, pumping, exhaust treatment, cooling and electrical services. Identify the endpoint option, installation responsibilities and process acceptance demonstration.

Product documentation

Discuss this configuration

Compare RIE and ICP-RIE selection requirements

Technical Specifications

ParameterValue
Wafer sizeup to 200 mm
ICP source sizes65 mm and 300 mm
Electrode temperature range-150 °C to 400 °C
SpecificationClusters with up to 5 process modules
SpecificationTransition from 20 °C to -150 °C in as little as 10 minutes
SpecificationWafer clamping with helium backside cooling

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Not sure which configuration you need? Help me choose

Contact Vvon Technologies Limited about Oxford Instruments equipment requirements in Bangladesh.

Phone: +8801805987890 | Email: info@vvon.com.bd

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