PlasmaPro 100 ALE with Etchpoint
Brand: Oxford Instruments | Category: Nanotechnology
This configuration pairs the PlasmaPro 100 ALE with the Etchpoint UV reflectance etch depth monitor developed with LayTec. It measures remaining AlGaN thickness during processing, so p-GaN HEMT and recessed gate MISHEMT structures can be etched to a set depth.
Technical Specifications
| Parameter | Value |
|---|---|
| Post etch remaining AlGaN thickness accuracy | ±0.5 nm |
| Etchpoint spot size | approximately 300 µm |
| Etchpoint measurement pad | 500 x 500 µm unstructured test pad |
| Specification | High rate ICP and ALE processing of GaN and AlGaN in the same chamber up to 200 mm |
| AlGaN surface roughness | 0.8 nm Ra for ICP-RIE, 0.4 nm Ra for ICP-RIE with ALE |
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